Advancing the UV/EUV
Measurement Science


AXUV Series

100% Internal Quantum Efficiency in the UV/EUV

AXUV Information

AXUV Products


UVG Series

100% Internal Quantum Efficiency and Improved Stability in the UV

UVG Information

UVG Products


SXUV Series

Hundred of gigarads of radiation hardness; no degradation on exposure to 100 eV photons

SXUV Information

SXUV Products

PN Series

Newly available diodes with a p-on-n structure and 100% IQE between 350 and 940 nm.

PN Diodes: Information

PN Diodes: Information

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International Radiation Detectors, Inc.

Responsivity

Figure 1 shows a typical responsivity curve for a UVG-series photodiode with a 700 Å oxynitride window. The peaks and valleys above 160 nm are caused by the interaction of the complex index of refraction of silicon with the index of refraction and thickness of the oxynitride according to the standard interference relations of optics. The complexity of the responsivity (and external quantum efficiency spectrum) over the UV suggests that trap detectors made from UVG-series photodiodes would be useful for high accuracy applications.


Fig. 1: Typical responsivity of UVG-series photodiodes