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 Delivering Unparalleled Performance Home UVG Series SXUV Series ELECTRONICS
PRODUCT INFORMATION
CONTACT/FACILITIES 
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Temperature Dependence
Figure 1 shows the temperature dependence of the diode responsivity at 254 nm. Typically the responsivity was found to increase by .045% per degree Celsius. Note that this responsivity dependence on temperature is less than that reported by other manufacturers of UV-enhanced photodiodes. As the diode does have 100% internal collection efficiency, we believe that the temperature dependence of the responsivity is caused by an increase in the quantum yield with higher temperatures and also partly by the change in surface reflectance.
Fig. 1: Change in 254 nm responsivity of UVG photodiodes with temperature.
Figure 2 shows the temperature coefficient of responsivity for UVG photodiodes from 350 nm to 1100 nm wavelength range. The positive temperature coefficient of responsivity at wavelengths above 700 nm is caused by an increase in the minority carrier lifetime resulting in an increased diffusion length.
Fig. 2: Temperature coefficient of responsivity for UVG photodiodes.
Figure 3 shows temperature dependence of the shunt resistance. The shunt resistance was found to decrease by a factor of 2 for every 7.5°C rise in temperature.
Fig. 3: Change in shunt resistance of UVG photodiodes with temperature.
Figure 4 shows the typical temperature dependence of capacitance for the UVG photodiodes over a temperature range of 0 C to 40 C. The positive temperature dependence of diode capacitance occurs because the intrinsic carrier concentration increases with temperature which results in reduction of built-in potential.
Fig. 4: Temperature dependence of capacitance of UVG photodiodes at zero volts reverse bias
