International Radiation Detectors, Inc.

Absolute UV Silicon Photodiodes

AXUV Series

Silicon p-n junction photodiodes (AXUV-series) have been developed by International Radiation Detectors for applications in the vacuum ultraviolet, extreme ultraviolet and the soft x-ray (XUV,wavelength range 1800 Å to 2 Å, energy range 7 eV to 6000 eV) spectral region. Unlike common p-n junction diodes, these diodes do not have a doped dead-region and have zero surface recombination resulting in near theoretical quantum efficiencies for XUV photons and other low energy particles. The AXUV diodes are internal photoelectric devices and hence are less sensitive to minute vacuum system contaminants than conventional XUV detectors based on the external photoelectric effect.

These diodes are fabricated by an ULSI (Ultra Large Scale Integrated Circuit) compatible process and their construction is shown in the following figure.

Developed in collaboration with NIST, NOAA, NIH, LLNL, NCAR and LANL