International Radiation Detectors, Inc.
Absolute Devices /
Transfer Standards
Click name to download DWF Version of image
|
Sensitive Area (mm2) |
Size (mm²) |
Package Type |
Shunt Resistance (M-Ohm) @10mV |
Dark Current @50V |
Capacitance @0V |
Risetime (10%-90%) |
| AXUV100 |
100 |
10 X 10 |
Ceramic |
100 |
* |
20 nF** |
10 µSec** |
| AXUV100CP |
100 |
10 X 10 |
Ceramic |
100 |
* |
20 nF** |
10 µSec** |
| AXUV100EUT## |
100 |
10 X 10 |
Ceramic |
100 |
* |
20 nF** |
10 µSec** |
| AXUVSP2 |
96 |
6 x 16 |
Ceramic |
100 |
* |
20 nF** |
10 µSec** |
| AXUV96 |
96 |
6 x 16 |
Metal |
100 |
* |
20 nF** |
10 µSec** |
| AXUV50HE1 |
50 |
Ø8 |
Ceramic |
10 |
* |
3 nF** |
6 µSec** |
| AXUV20 |
20 |
Ø5 |
Metal |
1000 |
* |
2 nF** |
2 µSec** |
| AXUV20A |
20 |
Ø5 |
Ceramic |
100 |
* |
5 nF** |
1 µSec** |
| AXUV20BNC |
20 |
Ø5 |
BNC |
1000 |
* |
2 nF** |
2 µSec** |
| AXUV20HE1 |
20 |
Ø5 |
Ceramic |
10 |
* |
500 pF** |
0.2 µSec** |
| AXUV300# |
330 |
22 X 15 |
Plastic |
20 |
* |
40 nF** |
15 µSec** |
| AXUV300C |
330 |
22 X 15 |
Ceramic |
40 |
* |
40 nF** |
15 µSec** |
| AXUV300M/G |
330 |
22 X 15 |
Metal |
20 |
* |
40 nF** |
15 µSec** |
| AXUV576 |
576 |
24 X 24 |
Metal |
5 |
* |
120 nF** |
50 µSec** |
| AXUV576C |
576 |
24 X 24 |
Ceramic |
5 |
* |
120 nF** |
50 µSec** |
| AXUV10 |
10 |
10 X 1 |
Ceramic |
1000 |
* |
2 nF** |
2 µSec** |
| AXUV36@% |
36 |
6 X 6 |
Metal |
10 |
* |
10 nF** |
10 µSec** |
| Part Number Extension Guide |
| A |
Ceramic package option (for packages with both metal and ceramic variants)
|
| BNC |
Detecting element mounted in a BNC type connector |
| C |
TO package with protective cap (no window) |
| CP |
Cut package |
| HE1 |
High energy option |
| S |
TO package with protective cap and Suprasil II window |
| Notes |
| # |
AXUV-1600 with five AXUV-300 chips is available |
| ## |
AXUV-100 photodiode with eutectically mounted chip for vacuum environments lower than 10-9torr |
| @ |
@ With 5 micron physical silicon thickness |
| % |
Quantum Efficiency at 100% for up to 10 KeV electrons |
| All AXUV products have at least 7 orders of magnitude of dynamic range. Please specify if detectors with larger dynamic range are required |
| * |
May be selected for a specific application at no additional cost. |
| ** |
Devices with better values may be selected. |
References:
1] E.M. Gullikson et al., "Stable Silicon Photodiodes for Absolute Intensity Measurements in the VUV and Soft X-ray Regions"
J. of Electron Spectroscopy and Related Phenomena, Vol. 80, 313-316 (1996).
|