Advancing the UV/EUV
Measurement Science


AXUV Series

100% Internal Quantum Efficiency in the UV/EUV

AXUV Information

AXUV Products


UVG Series

100% Internal Quantum Efficiency and Improved Stability in the UV

UVG Information

UVG Products


SXUV Series

Hundred of gigarads of radiation hardness; no degradation on exposure to 100 eV photons

SXUV Information

SXUV Products

PN Series

Newly available diodes with a p-on-n structure and 100% IQE between 350 and 940 nm.

PN Diodes: Information

PN Diodes: Information

Electronics

Technical Information

Services

Contact/Facilities

Publications

Payment Terms

 

International Radiation Detectors, Inc.

Absolute Devices / Transfer Standards

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Sensitive Area (mm2) Size
(mm²)		 Package Type Shunt Resistance
(M-Ohm)
@10mV		 Dark Current
@50V		 Capacitance
@0V		 Risetime (10%-90%)
AXUV100 100 10 X 10 Ceramic 100 * 20 nF** 10 µSec**
AXUV100GX $ 100 10 X 10 Ceramic 100 * 20 nF** 10 µSec**
AXUV100PC $$
(AXUV100BST)		 100 10 X 10 PC Board/FR4 100 * 20 nF** 10 µSec**
AXUV100G 100 10 X 10 Ceramic 100 * 20 nF** 10 µSec**
AXUV100CP 100 10 X 10 Ceramic 100 * 20 nF** 10 µSec**
AXUV100EUT## 100 10 X 10 Ceramic 100 * 20 nF** 10 µSec**
AXUV100TSA-Flange 100 10 X 10 Ceramic 100 * 20 nF** 10 µSec**
AXUVSP2 96 6 x 16 Ceramic 100 * 20 nF** 10 µSec**
AXUV96 96 6 x 16 Metal 100 * 20 nF** 10 µSec**
AXUV50G 50 Ø8 Ceramic 100 * 10 nF** 5 µSec**
AXUV50HE1 50 Ø8 Ceramic 10 * 3 nF** 6 µSec**
AXUV4 4 2 x 2 Ceramic 50 * 100 pF** 100 nSec**
AXUV4BST 4 2 x 2 PCB (FR4) 50 * 100 pF** 100 nSec**
AXUV12 12 4 Ø TO-39 1000 * 2 nF** 500 nSec**
AXUV20 20 Ø5 Metal 1000 * 2 nF** 2 µSec**
AXUV20A 24 Ø5.5 Ceramic 100 * 5 nF** 1 µSec**
AXUV20BNC 20 Ø5 BNC 1000 * 2 nF** 2 µSec**
AXUV20HE1 20 Ø5 Ceramic 10 * 500 pF** 0.2 µSec**
AXUV300 # 330 22 X 15 Plastic 20 * 40 nF** 15 µSec**
AXUV300C 330 22 X 15 Ceramic 40 * 40 nF** 15 µSec**
AXUV300M/G 330 22 X 15 Metal 20 * 40 nF** 15 µSec**
AXUV1600 § 1600 22 X 15 (x5) Metal 5 * 200 nF** 80 µSec**
AXUV576 576 24 X 24 Metal 5 * 120 nF** 50 µSec**
AXUV576CG 576 24 X 24 Ceramic 5 * 120 nF** 50 µSec**
AXUV2300 2304 24 X 24 (X4) Ceramic 5 * 200 nF** 25 µSec**
AXUV10 10 10 X 1 Ceramic 1000 * 2 nF** 2 µSec**

Part Number Extension Guide
A

Ceramic package option (for packages with both metal and ceramic variants)
BNC Detecting element mounted in a BNC type connector
BST Package intended for use as a beam-stop
C TO package with protective cap (no window)
CP Cut package
G High Radiation Hardness
HE1

High energy option
S TO package with protective cap and Suprasil II window
X Special package for X-ray measurements without backside gold

 

Notes
$ With 100 µm thick silicon for x-ray application.
See "X-ray" section
$$ With 50 µm thick silicon for x-ray application
See "X-ray" section
# AXUV-1600 with five AXUV-300 chips is available
## AXUV-100 photodiode with eutectically mounted chip for vacuum environments lower than 10-9torr
 All AXUV products have at least 7 orders of magnitude of dynamic range. Please specify if detectors with larger dynamic range are required
* May be selected for a specific application at no additional cost.
** Devices with better values may be selected.
§ To achieve 1600 mm2 active area the end user needs to connect, in parallel, the 5 elements of the photodiode

All AXUV products have at least 7 orders of magnitude of dynamic range.
Please specify if detectors with larger dynamic range are required


References:

1] E.M. Gullikson et al., "Stable Silicon Photodiodes for Absolute Intensity Measurements in the VUV and Soft X-ray Regions"