
Advancing the UV/EUV
Measurement Science
AXUV Series
100% Internal Quantum Efficiency in the UV/EUV
AXUV Information
AXUV Products
UVG Series
100% Internal Quantum Efficiency and Improved Stability in the UV
UVG Information
UVG Products
SXUV Series
Hundred of gigarads of radiation hardness; no degradation on exposure to 100 eV photons
SXUV Information
SXUV Products
Electronics
Technical Information
Contact/Facilities
Publications
Payment Terms
|
|
International Radiation Detectors, Inc.
High Speed AXUV Photodiodes
(use with 10-50 volts bias)
|
Sensitive Area (mm2) |
Size (mm) |
Package Type |
Shunt Resistance (M-Ohm) |
Dark Current @ 50V |
Capacitance @ 0V |
Risetime (10-90%) |
| AXUV5^ |
5 |
2.5 Ø |
TO-5 |
100 |
10 nA |
1 nF |
2 nSec |
| AXUV12 |
12 |
4 Ø |
TO-5 |
100 |
20 nA |
2 nF |
2 nSec |
| AXUV20HS1^ |
20 |
5 Ø |
Ceramic |
20 |
20 nA |
0.7 nF |
2 nSec# |
| AXUV20HS1BNC^ |
20 |
5 Ø |
BNC |
20 |
20 nA |
0.7 nF |
2 nSec# |
| AXUV63HS1^ |
63 |
9 Ø |
Ceramic |
20 |
20 |
0.7 nF |
2 nSec |
| AXUV63HS1-CH/LP**^ |
63 |
9 Ø |
Metal |
20 |
20 nA |
0.7 nF |
2 nSec |
| AXUVHS1*~ |
.05 |
.22 X .22 |
SMA |
1000 |
100 pA |
20 pF |
0.25 nSec |
| AXUVHS2*~ |
.05 |
.22 X .22 |
SSMA |
1000 |
100 pA |
20 pF |
0.25 nSec |
| AXUVHS3*~ |
5 x 10-3 |
.07 X .07 |
SSMA |
100 |
50 pA |
15 pF |
80 pSec |
| AXUVHS4*~ |
.026 |
.16 X .16 |
SMA |
1000 |
100 pA |
20 pF |
200 pSec |
| AXUVHS5*~ |
1 |
1 X 1 |
SMA |
1000 |
200 pA |
40 pF |
700 pSec |
| AXUVHS5A*~ |
1 |
1 X 1 |
TO46 |
1000 |
200 pA |
40 pF |
700 pSec |
| AXUVHS6*~ |
6.3 x 10-4 |
.025 X .025 |
SSMA |
1000 |
20 pA |
15 pF |
50 pSec |
| AXUVHS11*^ |
.28 |
.6 Ø |
SMA |
|
200 pA |
10 pF |
250 pSec |
| Notes: |
# 1 nSec@150 volts with high speed amplifiers |
|
* Available with free
standing filters |
|
~ Use with 50 volts bias |
|
~ Use with 150 volts bias |
References:
1] G.C. Idzorex and R.J. Bartlett, "Silicon Photodiode Characterization from 1 eV to 10 KeV"
SPIE Vol. 3114, 349-356 (1997).
|
|