Advancing the UV/EUV
Measurement Science


AXUV Series

100% Internal Quantum Efficiency in the UV/EUV

AXUV Information

AXUV Products


UVG Series

100% Internal Quantum Efficiency and Improved Stability in the UV

UVG Information

UVG Products


SXUV Series

Hundred of gigarads of radiation hardness; no degradation on exposure to 100 eV photons

SXUV Information

SXUV Products

PN Series

Newly available diodes with a p-on-n structure and 100% IQE between 350 and 940 nm.

PN Diodes: Information

PN Diodes: Information

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International Radiation Detectors, Inc.

High Speed AXUV Photodiodes
(use with 10-50 volts bias)


Sensitive Area
(mm2)		 Size
(mm)		 Package Type Rshunt

(MOhm)		 Dark
Current @50V		 C@0V Risetime (10-90%)  
AXUV5^ 5 2.5 Ø TO-5 100 10 nA 500 pF 2 nSec  
AXUV20HS1^ 20 5 Ø Ceramic 20 50 nA 0.7 nF 1 nSec#
AXUV20HS1-Cu^ 20 5 Ø Ceramic 20 50 nA 0.7 nF 1 nSec#
AXUV20HS1BNC^ 20 5 Ø BNC 20 50 nA 0.7 nF 1 nSec#  
AXUV20HS1CH -OC**^ 19.5 5Ø Ceramic 20 50 nA 0.7 nF 1 nSec#
AXUV63HS1^ 63 9 Ø Ceramic 20 20 nA 2 nF 2 nSec  
AXUV63HS1-CH-LP**^ 63 9 Ø Metal 20 20 nA 2 nF 2 nSec  
AXUV63HS1-CH-LP2**^ 63 9 Ø Metal 20 20 nA 2 nF 2 nSec
AXUV63HS1CH**^ 62 9 Ø Ceramic 20 20 nA 2 nF 2 nSec
AXUV63HS1CH
-OC**^		 62 9 Ø Ceramic 20 20 nA 2 nF 2 nSec
AXUVHS1*~ .05 .22 X .22 SMA 1000 100 pA 5 pF 250 pSec  
AXUVHS2*~ .05 .22 X .22 SSMA 1000 100 pA 5 pF 250 pSec  
AXUVHS3*~ 5 x 10-3 .07 X .07 SSMA 100 50 pA 2 pF 80 pSec  
AXUVHS4*~ .026 .16 X .16 SMA 1000 100 pA 10 pF 200 pSec  
AXUVHS5*~ 1 1 X 1 SMA 1000 200 pA 40 pF 700 pSec  
AXUVHS5A*~ 1 1 X 1 TO46 1000 200 pA 40 pF 700 pSec  
AXUVHS6*~ 6.3 x 10-4 .025 X .025 SSMA 1000 20 pA 1 pF 50 pSec  
AXUVHS6A*~ 6.3 x 10-4 .025 X .025 Ceramic (Cut) 1000 20 pA 1 pF 50 pSec
AXUVHS10*~ 2.92 x
10-3		 .054 X .054 SSMA 1000 50 pA 1.5 pF 60 pSec  
AXUVHS11*^ .28 .6 Ø SMA   200 pA 10 pF 250 pSec  
AXUVHS13*^ 0.785 1.00Ø SMA   200 pA 40 pF 250 pSec  


Part Number Extension Guide
BNC Detecting element mounted in a BNC type connector
HS High-speed detector
CH Detector with center hole
CH-OC Detector with hole off-center from package center
LP Low Package
-Cu Copper Pins

Notes: # 1 nSec@150 volts with high speed amplifiers
* Available with free standing filters
** Better values may be selected
~ Use with 50 volts bias
^ Use with 150 volts bias

References:

1] G.C. Idzorex and R.J. Bartlett, "Silicon Photodiode Characterization from 1 eV to 10 KeV"

SPIE Vol. 3114, 349-356 (1997).