Advancing the UV/EUV
Measurement Science
AXUV Series
100% Internal Quantum Efficiency in the UV/EUV
AXUV Information
- Standard Products
- Operating Principles
- Applications
- Electron Detectors
- Ion Detectors
- Quantum Efficiency Stability
- Absolute X-Ray Detectors
AXUV Products
- Single Element
(Absolute Devices Transfer Standards) - Quadrant/Position Sensing
- Arrays (Linear)
- Arrays (Concentric)
- Arrays
(2 Dimensional) - Split Geometries
- High Speed
- Directly Deposited Filters
- Electron Detectors
- Transmission Detectors
UVG Series
100% Internal Quantum Efficiency and Improved Stability in the UV
UVG Information
- Standard Products
- Operating Principles
- Radiation Hardness
- Quantum Yield
- Responsivity
- Linearity
- Uniformity
- Responsivity Stability
- Performance Characteristics
UVG Products
SXUV Series
Hundred of gigarads of radiation hardness; no degradation on exposure to 100 eV photons
SXUV Information
- Standard Products
- Responsivity Stability
- CW Responsivity
- Pulse Responsivity
- Performance Characteristics
SXUV Products
PN Series
Newly available diodes with a p-on-n structure and 100% IQE between 350 and 940 nm.
PN Diodes: Information
PN Diodes: Information
Electronics
- BT-250 BiasTee
- PA-100
- PA-100V
- PA-13
- AXUV20AHYB1
- AXUV100HYB
- AXUV100HYB1V/Cu
- AXUV-16ELOHYB1
- AMP16, Amplifier for AXUV16EL
- QSP1,Quadrant Diode Amplifier for Position Sensing (PS) Diodes
Technical Information
- Temperature Dependence
- Time Response
- Noise Characteristics
- Linearity
- Polarization Sensitivity
- Proper Usage
- Handling
- Vacuum Compatibility
Services
Contact/Facilities
International Radiation Detectors, Inc.High Speed AXUV Photodiodes
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| Sensitive Area (mm2) |
Size (mm) |
Package Type | Rshunt (MOhm) |
Dark Current @50V |
C@0V | Risetime (10-90%) | ||
| AXUV5^ | 5 | 2.5 Ø | TO-5 | 100 | 10 nA | 500 pF | 2 nSec | |
| AXUV20HS1^ | 20 | 5 Ø | Ceramic | 20 | 50 nA | 0.7 nF | 1 nSec# |  |
| AXUV20HS1BNC^ | 20 | 5 Ø | BNC | 20 | 50 nA | 0.7 nF | 1 nSec# | |
| AXUV63HS1^ | 63 | 9 Ø | Ceramic | 20 | 20 nA | 2 nF | 2 nSec | |
| AXUV63HS1-CH-LP**^ | 63 | 9 Ø | Metal | 20 | 20 nA | 2 nF | 2 nSec | |
| AXUVHS3*~ | 5 x 10-3 | .07 X .07 | SSMA | 100 | 50 pA | 2 pF | 80 pSec | |
| AXUVHS5*~ | 1 | 1 X 1 | SMA | 1000 | 200 pA | 40 pF | 700 pSec | |
| AXUVHS5A*~ | 1 | 1 X 1 | TO46 | 1000 | 200 pA | 40 pF | 700 pSec | |
| AXUVHS6*~ | 6.3 x 10-4 | .025 X .025 | SSMA | 1000 | 20 pA | 1 pF | 50 pSec | |
| AXUVHS6A*~ | 6.3 x 10-4 | .025 X .025 | Ceramic (Cut) | 1000 | 20 pA | 1 pF | 50 pSec |  |
| AXUVHS11*^ | .28 | .6 Ø | SMA | 200 pA | 10 pF | 250 pSec | ||
| AXUVHS15*^ | 0.28 | 0.6Ø | SMA/22 | 200 pA | 10 pF | 250 pSec |
| Part Number Extension Guide | |
| BNC | Detecting element mounted in a BNC type connector |
| HS | High-speed detector |
| CH | Detector with center hole |
| CH-OC | Detector with hole off-center from package center |
| LP | Low Package |
| -Cu | Copper Pins |
| Notes: | # 1 nSec@150 volts with high speed amplifiers |
| * | Available with free standing filters |
| ** | Better values may be selected |
| ~ | Use with 50 volts bias |
| ^ | Use with 150 volts bias |
References:
1] G.C. Idzorex and R.J. Bartlett, "Silicon Photodiode Characterization from 1 eV to 10 KeV"
SPIE Vol. 3114, 349-356 (1997).
