Advancing the UV/EUV
Measurement Science
AXUV Series
100% Internal Quantum Efficiency in the UV/EUV
AXUV Information
- Standard Products
- Operating Principles
- Applications
- Electron Detectors
- Ion Detectors
- Quantum Efficiency Stability
- Absolute X-Ray Detectors
AXUV Products
- Single Element/Absolute Devices Transfer Standards
- Quadrant/Position Sensing
- Arrays
- High Speed
- Directly Deposited Filters
UVG Series
100% Internal Quantum Efficiency and Improved Stability in the UV
UVG Information
- Standard Products
- Operating Principles
- Radiation Hardness
- Quantum Yield
- Responsivity
- Linearity
- Uniformity
- Solar Blind UV Detectors
- Responsivity Stability
- Performance Characteristics
UVG Products
SXUV Series
Hundred of gigarads of radiation hardness; no degradation on exposure to 100 eV photons
SXUV Information
- Standard Products
- Responsivity Stability
- CW Responsivity
- Pulse Responsivity
- Performance Characteristics
SXUV Products
Electronics
- BT-250 BiasTee
- PA-100
- PA-100V
- PA-13
- AXUV20AHYB1
- AXUV-100HYB
- AXUV-16ELOHYB1
- AMP16, Amplifier for AXUV16EL
- QSP1,Quadrant Diode Amplifier for Position Sensing (PS) Diodes
Technical Information
- Temperature Dependence
- Time Response
- Polarization Sensitivity
- Proper Usage
- Handling
- Vacuum Compatibility
Contact/Facilities
International Radiation Detectors, Inc.Quantum Efficiency StabilityThe radiation hardness of AXUV diodes is 100 to 1,000 Mrads (SiO2) when tested with 10 eV photons. This hardness is about 10,000 times greater than that of commonly available PIN silicon photodiodes. Diodes with 1 Gigarad (SiO2) hardness are fabricated by nitrogen doping at the Si-SiO2 interface to form an oxynitride window instead of the standard silicon dioxide window. Letter G at the end of a model number indicates this type of device. The 1 Gigarad (SiO2) hardness achieved is the highest hardness ever reported or known to exist in any silicon device. AXUV diodes with nitrided silicon dioxide passivating layer did not show any change in quantum efficiency after their exposure to 100% relative humidity for 4 weeks and room temperature storage for a few years. Owing to their above characteristics, AXUV Photodiodes are being used by NIST as transfer standards in 5 nm to 250 nm range. |
