Advancing the UV/EUV
Measurement Science


AXUV Series

100% Internal Quantum Efficiency in the UV/EUV

AXUV Information

AXUV Products


UVG Series

100% Internal Quantum Efficiency and Improved Stability in the UV

UVG Information

UVG Products


SXUV Series

Hundred of gigarads of radiation hardness; no degradation on exposure to 100 eV photons

SXUV Information

SXUV Products

PN Series

Newly available diodes with a p-on-n structure and 100% IQE between 350 and 940 nm.

PN Diodes: Information

PN Diodes: Information

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International Radiation Detectors, Inc.

Transmission Mode Detectors

AXUV detectors with thin physical Si thickness operate as transmission mode detectors. These detectors are capable of precisely measuring x-ray fluxes in applications such as synchrotron beam measurements or energy dispersive electron microscopy. Best transmissiona and minimal beam disruption is achieved when operating at beam energies well about the silicon k-edge of 1.84 keV (Figure 2). Because the detector is only 5 µm thin, beam parallax is minimized. In addition, the detector transmission is very unidform through the detector, as seen in measurements performed by PTB (Figure 3).

With 5 µm physical silicon thickness, typical device responsivity and transmission curves are as follows:

Figure 1: X-ray responsivity for 5 µm physical thickness AXUV photodiode.

Figure 2: X-ray transmission for 5 µm physical thickness AXUV photodiode.

Figure 3: Relative uniformity transmission scan for 5 µm physical thickness AXUV photodiode, PTB data.

Click name to download DWF Version of image

Sensitive Area (mm2) Size
(mm²)
Package Type Shunt Resistance
(M-Ohm)
@10mV
Dark Current
@50V
Capacitance
@0V
Risetime (10%-90%)
AXUV36@ 36 6 X 6 Metal 10 * 10 nF** 10 µSec**

 

Notes
@ With 5 µm physical Silicon thickness for x-ray application.
See "X-ray" section
* May be selected for a specific application at no additional cost.
** Devices with better values may be selected.