Advancing the UV/EUV
Measurement Science


AXUV Series

100% Internal Quantum Efficiency in the UV/EUV

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100% Internal Quantum Efficiency and Improved Stability in the UV

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SXUV Series

Hundred of gigarads of radiation hardness; no degradation on exposure to 100 eV photons

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International Radiation Detectors, Inc.

AXUV Photodiodes with Directly Deposited Filters

To avoid use of fragile freestanding thin filters during XUV experiments and also in space missions, visible blind AXUV photodiodes with integrated thin film filters have been developed. The table below lists available AXUV diodes with different filter materials and their passbands. Figures 1 and 2 plot a representative selection of quantum efficiencies for the filtered diodes in the VUV region. These filtered diodes exhibit visible light blocking of at least four orders of magnitude. Diodes with higher visible light blocking can be specially selected if required. IRD is continuously making AXUV diodes with many different filters. Users are requested to contact us for their special filter requirements.

The advantages of these integrated detector-filter devices over presently used separate freestanding thin foil filters and detectors are compactness, higher reliability, ease in manufacturing and handling, more stable bandpass and flexibility in design as the filter thicknesses are determined by optical constants and not by the mechanical strength requirement.


Fig. 1: Quantum Efficiencies, various AXUV filtered diodes, 0 - 110 nm


Fig. 2: Quantum Efficiencies, various AXUV filtered diodes, 5 - 35 nm


f
Product Name Filter Thickness Pass Band
AXUV100Cr/W/Au 8/100/400 nm < 1 nm
AXUV100Al/Fe * 400/450 nm 1.7-3.5 nm
AXUV100Al/Mn2 * 500/500 nm 1.9-3.5 nm
AXUV100Al/V * 400/600 nm 2.4-3.5 nm
AXUV100Ti/Zr/Al * 250/100/100 nm 2.8-5 nm
AXUV100Pb/Pd 50/100 nm 3-10 nm
AXUV100Al/CaF2/Ag* 200/1000/250 nm 3.6-5.2 nm
AXUV100Ti/Mo/Au 40/200/100 nm 5-12 nm
AXUV100Ti/Mo/C 50/200/70 nm 5-13 nm
AXUV100Ti/Mo/Si/C 40/200/100/50 nm 5-15 nm
AXUV100Ti/Zr/C 6/200/50 nm 6-16 nm
AXUV100Ti/Zr/Au # 20/200/100 nm 6-12 nm
AXUV100Ti/C # 500/50 nm < 7 nm
AXUV100Ti/Pd # 200/100 nm < 11 nm
AXUV100Si/Zr * 100/200 nm 11-18 nm
AXUV100Mo/Si 350/500 nm 12.2-15.8 nm
AXUV100Mo/Si2 200/100 nm 12.2-15.8 nm
AXUV100Ti/C2 200/50 nm < 12 nm
AXUV100Al/Zr * 125/125 nm 17-21 nm
AXUV100Al 150 nm 17-80 nm
AXUV100Al2 40 nm 17-80 nm
AXUV100GA12 50 nm 17-80 nm
AXUV100Al3 100 nm 17-80 nm
AXUV100A14* 1000 nm 17-80 nm
AXUV100A15 300 nm 17-80 nm
AXUV100Al/C 200/50 nm 17-36 nm
AXUV100Al/Nb/C# 250/50/50 nm 17-21 nm
AXUV100Al/Mn# 200/100 nm 25-40 nm
AXUV100Al/Mn3 270/100 nm 25-40 nm
AXUV100Cr/Al 60/150 nm 27-40 nm
AXUV100Cr/Al2 # 100/200 nm 27-37 nm
AXUV100Cr/Al3 100/270 nm 27-37 nm
AXUV100Sn: 2% Ge 200/10 nm 53-74 nm
AXUV100In/SiC 200/20 nm 76-105 nm
AXUV100In/MgF2 200/20 nm 75-100 nm
AXUV100LA 200 nm 117-131 nm
AXUVSP2Al 150 nm 17-80 nm
AXUV96Al # 300 nm 17-80 nm
AXUV96Ti/Mo/C # 50/200/70 nm 5-13 nm
AXUV96Sn: 2% Ge 200/10 nm 53-74 nm
AXUV96In/SiC 200/20 nm 76-105 nm
AXUV20Ti/Mo/C 50/200/70 nm 5-13 nm
AXUV20Ti/Zr/C 6/200/50 nm 6-16 nm
AXUV20Ti/Mo/C 50/200/70 nm 5-13 nm
AXUV20Mo/Si 43.5/500 nm 12.2-15.8 nm
AXUV20Al 300 nm 17-80 nm
AXUV20Ti/C 200/50 nm < 7 nm
AXUV20HS1Si/Zr 100/200 nm 11-18 nm
AXUV20HS1Al5 300 nm 17-80 nm
AXUV20HS1Mo/Si 350/500 nm 12.2-15.8 nm
AXUV20AMo/Si 350/500 nm 12.2-15.8 nm
AXUV20ASi/Zr 100/200 nm 11-18 nm
AXUV20BNC-Si/Zr 100/200 nm 11-18 nm
AXUV5ASi/Zr 100/200 nm 11-18 nm
AXUVHS5Si/Zr 100/200 nm 11-18 nm
AXUVHS5Mo/Si 350/500 nm 12.2-15.8 nm
AXUVHS5Al 200 nm 17-80 nm
AXUVHS5Al/C 200/50 nm 17-36 nm
AXUV300Al 150 nm 17-80 nm


Notes: * Developed Specifically for the Filtered Diode Ross Spectrometer
# Developed for the Solar Measurements