International Radiation Detectors, Inc.

Absolute UV Silicon p-on-n Photodiodes

PN Series

The production of 100% Internal Quantum Efficiency (IQE) p-on-n photodiodes has recently been realized in the PN series of photodiodes. This diode represents the first p-on-n structure in the world with 100% IQE. IRD's p-on-n photodiodes have absolute response and unity IQE from 350 - 950 nm. The 100% internal quantum efficiency in 350-950 nm region indicates that these devices will have zero temperature dependence of responsivity in this spectral range.

P-on-N type photodiodes offer certain advantages over those of the N-on-P, including ease of fabricating devices with lower capacitances, higher shunt resistances and lower dark currents. However, when exposed to photons, radiation hardness is lower then equivalent N-on-P diodes.[1]

Figure 1: Internal Quantum Efficiency of the AXUVPN100 photodiode

Figure 2: Structure of the PN type photodiode

In addition, the AXUVPN100LC devices are available. These devices trades some UV responsivity (less then 450 nm) in exchange for lower device capacitance. Typical capacitances are shown in Figure 3.

Figure 3: Capacitance of the AXUVPN100LC

References:

1] Private communications with Eric .M. Gullikson, Lawrence Berkeley Laboratory