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AXUV Series
100% Internal Quantum Efficiency in the UV/EUV
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UVG Series
100% Internal Quantum Efficiency and Improved Stability in the UV
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SXUV Series
Hundred of gigarads of radiation hardness; no degradation on exposure to 100 eV photons
SXUV Information
SXUV Products
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Newly available diodes with a p-on-n structure and 100% IQE between 350 and 940 nm.
PN Diodes: Information
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International Radiation Detectors, Inc.
SXUV Specifications (22°C)
Click name to download DWF Version of image
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Sensitive Area (mm^2)
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Size (mm)
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Package Type
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Shunt Resistance (M-Ohm)
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Dark Current at 50V
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Capacitance at 0V
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Risetime (10-90%)
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SXUV576
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576
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24X24
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Metal
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5
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*
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1000 nF*
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2 µSec**
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SXUV300
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330
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22X15
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Metal
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10
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*
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40 nF*
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15 µSec**
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SXUV300C
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330
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22X15
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Ceramic
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5
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*
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40nF
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15 µSec**
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SXUV100
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100
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10 X 10
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Ceramic
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10
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*
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20 nF**
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10 µSec**
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SXUV100LP
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100
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10 X 10
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Ceramic
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10
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*
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20 nF**
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10 µSec**
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SXUV100LPA
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100 |
10 X 10 |
Cermaic |
10
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*
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20 nF**
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10 µSec**
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SXUV100RPD***
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100
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10 X 10
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Ceramic
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10
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*
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20 nF**
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10 µSec**
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SXUV20
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20
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5.0 Ø
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TO-8
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100
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*
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4 nF**
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2 µSec**
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SXUV20RPD***
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20
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5.0 Ø
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TO-8
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100
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*
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4 nF**
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2 µSec**
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SXUV20A
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24
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5.5 Ø
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Ceramic
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100
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*
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4 nF**
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2 µSec**
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SXUV20ARPD
***
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24 |
5.5 Ø
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Ceramic
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100
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*
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4 nF**
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2 µSec**
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SXUV20C
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24 |
5.5 Ø
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TO-8
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100
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*
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4 nF**
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2 µSec**
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SXUV20BNC
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20
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5.0 Ø
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BNC
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100
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*
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4 nF**
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2 µSec**
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SXUV20LP-EUT
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20
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5.0 Ø
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Metal |
100
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*
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4 nF**
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2 µSec**
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SXUV10A
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10
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1 X 10
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Ceramic/C10A |
400
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*
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1 nF**
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0.6 µSec**
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SXUV5
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5
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2.5 Ø
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TO-5
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200
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* |
200 pF**
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< 2 nSec**
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SXUV5S |
5
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2.5 Ø
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TO-5
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200
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* |
200 pF**
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< 2 nSec**
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| Part Number Extension Guide |
| BNC |
Detecting element mounted in a BNC type connector |
| EUT |
Chip eutectical mounted with gold preform |
| LP |
"Low Profile" Package |
| S |
TO package with protective cap and Suprasil II window |
References:
1] E.M. Gullikson et al., "Stable Silicon Photodiodes for Absolute Intensity Measurements in the VUV and Soft X-ray Regions"
J. of Electron Spectroscopy and Related Phenomena, Vol. 80, 313-316 (1996).
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