International Radiation Detectors, Inc.
SXUV Specifications (22°C)
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Sensitive Area (mm^2)
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Size (mm)
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Package Type
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Shunt Resistance (M-Ohm)
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Dark Current at 50V
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Capacitance at 0V
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Risetime (10-90%)
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SXUV576
|
576
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24X24
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Metal
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5
|
*
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1000 nF*
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2 µSec**
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SXUV300
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330
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22X15
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Metal
|
10
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*
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40 nF*
|
15 µSec**
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SXUV300C
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330
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22X15
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Ceramic
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5
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*
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40nF
|
15 µSec**
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SXUV100
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100
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10 X 10
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Ceramic
|
10
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*
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20 nF**
|
10 µSec**
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SXUV100LP
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100
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10 X 10
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Ceramic
|
10
|
*
|
20 nF**
|
10 µSec**
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SXUV100LPA
|
100 |
10 X 10 |
Cermaic |
10
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*
|
20 nF**
|
10 µSec**
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SXUV100RPD***
|
100
|
10 X 10
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Ceramic
|
10
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*
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20 nF**
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10 µSec**
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SXUV20
|
20
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5.0 Ø
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TO-8
|
100
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*
|
4 nF**
|
2 µSec**
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SXUV20RPD***
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20
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5.0 Ø
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TO-8
|
100
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*
|
4 nF**
|
2 µSec**
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SXUV20A
|
20
|
5.0 Ø
|
Ceramic
|
100
|
*
|
4 nF**
|
2 µSec**
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SXUV20ARPD
***
|
20
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5.0 Ø
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Ceramic
|
100
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*
|
4 nF**
|
2 µSec**
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SXUV20C
|
20
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5.0 Ø
|
TO-8
|
100
|
*
|
4 nF**
|
2 µSec**
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SXUV20BNC
|
20
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5.0 Ø
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BNC
|
100
|
*
|
4 nF**
|
2 µSec**
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SXUV10A
|
10
|
1 X 10
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C10A
|
400
|
*
|
1 nF**
|
0.6 µSec**
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SXUV5
#
|
5
|
2.5 Ø
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TO-5
|
200
|
20 nA
|
200 pF**
|
< 2 µSec**
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SXUV5S#
|
5
|
2.5 Ø
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TO-5
|
200
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20 nA
|
200 pF**
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< 2 µSec**
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References:
1] E.M. Gullikson et al., "Stable Silicon Photodiodes for Absolute Intensity Measurements in the VUV and Soft X-ray Regions"
J. of Electron Spectroscopy and Related Phenomena, Vol. 80, 313-316 (1996).
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