Advancing the UV/EUV
Measurement Science


AXUV Series

100% Internal Quantum Efficiency in the UV/EUV

AXUV Information

AXUV Products


UVG Series

100% Internal Quantum Efficiency and Improved Stability in the UV

UVG Information

UVG Products


SXUV Series

Hundred of gigarads of radiation hardness; no degradation on exposure to 100 eV photons

SXUV Information

SXUV Products

Electronics

Technical Information

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International Radiation Detectors, Inc.

SXUV Photodiodes with Directly Deposited Filters

To avoid use of fragile freestanding thin filters during XUV experiments particularly EUV lithography and research, visible blind SXUV photodiodes with integrated thin film filters have been developed. The table below lists available SXUV diodes with different filter materials and their passbands. These filtered diodes exhibit visible light blocking of at least four orders of magnitude. Diodes with higher visible light blocking can be specially selected if required. IRD is continuously making SXUV diodes with many different filters. Users are requested to contact us for their special filter requirements.

The advantages of these integrated detector-filter devices over presently used separate freestanding thin foil filters and detectors are compactness, higher reliability, ease in manufacturing and handling, more stable bandpass and flexibility in design as the filter thicknesses are determined by optical constants and not by the mechanical strength requirement.


Product Name Filter Thickness Pass Band
SXUV100Mo/Si/SiC
250/200/50 nm
11-16 nm
SXUV100Si/Zr
100/200 nm
11-18 nm
SXUV100Mo/Si
350/500 nm
12.2-15.8 nm
SXUVHS5Si/Zr
50/480 nm
11-18 nm
SXUVHS5Mo/Si
350/500 nm
12.2-15.8 nm
SXUV5ASi/Zr
100/200 nm
11-18 nm
SXUV20HS1Si/Zr
100/200 nm
11-18 nm
SXUV20HS1Mo/Si
350/500 nm
12.2-15.8 nm
SXUV20HS1Mo/Si/SiC
500/500/50 nm
12.2 - 14 nm
SXUV20ASi/Zr
100/200 nm
11-18 nm
SXUV20AMo/Si
350/500 nm
12.2-15.8 nm