Advancing the UV/EUV
Measurement Science
AXUV Series
100% Internal Quantum Efficiency in the UV/EUV
AXUV Information
- Standard Products
- Operating Principles
- Applications
- Electron Detectors
- Ion Detectors
- Quantum Efficiency Stability
- Absolute X-Ray Detectors
AXUV Products
- Single Element
(Absolute Devices Transfer Standards) - Quadrant/Position Sensing
- Arrays (Linear)
- Arrays (Concentric)
- Arrays
(2 Dimensional) - Split Geometries
- High Speed
- Directly Deposited Filters
- Electron Detectors
- Transmission Detectors
UVG Series
100% Internal Quantum Efficiency and Improved Stability in the UV
UVG Information
- Standard Products
- Operating Principles
- Radiation Hardness
- Quantum Yield
- Responsivity
- Linearity
- Uniformity
- Responsivity Stability
- Performance Characteristics
UVG Products
SXUV Series
Hundred of gigarads of radiation hardness; no degradation on exposure to 100 eV photons
SXUV Information
- Standard Products
- Responsivity Stability
- CW Responsivity
- Pulse Responsivity
- Performance Characteristics
SXUV Products
PN Series
Newly available diodes with a p-on-n structure and 100% IQE between 350 and 940 nm.
PN Diodes: Information
PN Diodes: Information
Electronics
- BT-250 BiasTee
- PA-100
- PA-100V
- PA-13
- AXUV20AHYB1
- AXUV100HYB
- AXUV100HYB1V/Cu
- AXUV-16ELOHYB1
- AMP16, Amplifier for AXUV16EL
- QSP1,Quadrant Diode Amplifier for Position Sensing (PS) Diodes
Technical Information
- Temperature Dependence
- Time Response
- Noise Characteristics
- Linearity
- Polarization Sensitivity
- Proper Usage
- Handling
- Vacuum Compatibility
Services
Contact/Facilities
International Radiation Detectors, Inc.Absolute UV Silicon PhotodiodesUVG SeriesSilicon p-n junction photodiodes (UVG-series) with 100% photogenerated carrier collection efficiency have been developed by International Radiation Detectors for detection of near ultraviolet and vacuum ultraviolet (600 - 160 nm) photons. Unlike conventional p-n junction photodiodes, these photodiodes do not have a doped dead-region in front and have zero surface recombination resulting in near theoretical quantum efficiencies to UV and visible photons. The UVG series diodes are fabricated by a ULSI (Ultra Large Scale Integrated Circuit) compatible process and their construction is shown in the following figure.  |
