Response of AXUV100GX Photodiodes Based on Energy Absorption Coefficients from National Institute of Science and Technology (NIST)	
http://physics.nist.gov/PhysRefData/XrayMassCoef/cover.html	
104.6 Micrometers Silicon Thickness (measured from absorption depth of light between 920 - 1100 nm)	
SiO2 Transmission (7 nm) assumed as 100%	

Energy	Responsivity
(keV)	(A/W)	
1.00	2.74E-01
1.50	2.74E-01
1.84	2.68E-01
1.84	2.68E-01
2.00	2.68E-01
3.00	2.68E-01
4.00	2.68E-01
5.00	2.68E-01
6.00	2.60E-01
8.00	2.11E-01
10.00	1.48E-01
15.00	5.70E-02
20.00	2.54E-02
30.00	7.51E-03
40.00	3.11E-03
50.00	1.59E-03
60.00	9.37E-04
80.00	4.51E-04
100.00	2.95E-04
150.00	2.02E-04
200.00	1.90E-04
300.00	1.92E-04
400.00	1.94E-04
500.00	1.94E-04
600.00	1.93E-04
800.00	1.88E-04
1000.00	1.82E-04
1250.00	1.73E-04
1500.00	1.66E-04
2000.00	1.53E-04
3000.00	1.37E-04
4000.00	1.28E-04
5000.00	1.23E-04
6000.00	1.20E-04
8000.00	1.16E-04
10000.00	1.15E-04
15000.00	1.14E-04
20000.00	1.15E-04